Trench-based power semiconductor devices with increased breakdown voltage characteristics

ABSTRACT

Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.13/443,986, filed Apr. 11, 2012, which is a division of U.S. applicationSer. No. 12/417,586, filed Apr. 2, 2009, now U.S. Pat. No. 8,174,067,which claims the benefit of U.S. Provisional Application No. 61/120,818,filed Dec. 8, 2008, all of which are commonly assigned and incorporatedherein by reference in their entirety for all purposes.

BACKGROUND

Exemplary power semiconductor devices include planar-gate MOSFETtransistors, vertical gate MOSFET transistors, insulated-gate bipolartransistors (IGBTs), rectifiers, and synchronous rectifiers. Typicalimplementations of the trench-gate variety of these devices comprise anarray of trenches formed in the top surface of the semiconductor die,with each trench filled with a shield electrode and/or a gate electrode,depending upon the type of power device. The trenches define acorresponding array of mesas, each mesa being disposed between adjacenttrenches. Depending upon the device implemented on the die, variouselectrodes and/or doped regions are disposed at the top of the mesa.Each mesa and its adjacent trenches implement a small instance of thedevice, and the small instances are coupled together in parallel toprovide the whole power semiconductor device. The whole device has an ONstate where a desired current flows through the device, an OFF statewhere current flow is substantially blocked in the device, and abreakdown state where an undesired current flows due to an excessoff-state voltage being applied between the current conductingelectrodes of the device. The voltage at which breakdown is initiated iscalled the breakdown voltage. Each mesa and its adjacent trenches areconfigured to provide a desired set of ON-state characteristics andbreakdown voltage. There are various tradeoffs in the design of the mesaand trenches between achieving good ON-state characteristics, highbreakdown voltage, and improved switching characteristics.

A typical power semiconductor die has an active area where the array ofmesas and trenches that implement the device are located, a fieldtermination area around the active area, and an inactive area whereinterconnects and channel stops may be provided. The field terminationarea minimizes the electric fields around the active area, and is notintended to conduct current. Ideally, one would like the device'sbreakdown voltage to be determined by the breakdown processes associatedwith the active area. However, there are various breakdown processesthat can occur in the field termination area and inactive area atsignificantly lower voltages. These breakdown processes may be referredto as passive breakdown processes.

Much effort has been made in the prior art to design field terminationareas that have higher breakdown voltages than the active area. However,such prior art designs often fall short of this goal, often requiringcompromises that increase the total die area and cost of the die.

BRIEF SUMMARY OF THE INVENTION

The inventors have discovered several locations in trench-based powerdevices where parasitic breakdown conditions are likely to occur first.The present application provides novel and inventive features thatcounter these breakdown conditions and increase breakdown voltage.

Aspects of the exemplary embodiments of the present invention describedherein may be used alone or in any combination.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a top view of an exemplary semiconductor die thatincorporates several features according to the present invention.

FIG. 2 shows a magnified view of the left top corner of the exemplarysemiconductor die of FIG. 1 according to the present invention.

FIG. 3 shows a magnified view of a portion of the left side of theexemplary semiconductor die of FIG. 1 according to the presentinvention.

FIGS. 4 and 5 show a first cross section view of a portion of theexemplary semiconductor die of FIG. 1 and a magnified view thereof inFIG. 5 according to the present invention.

FIG. 6 shows a magnified cross section view of a portion of a variationof the exemplary semiconductor die of FIG. 1 according to the presentinvention.

FIGS. 7-14 show various magnified cross section views of the exemplarysemiconductor die of FIG. 1 and possible variations thereof according tothe present invention.

FIG. 15 shows a top view of another exemplary semiconductor die thatincorporates several features according to the present invention.

FIGS. 16-19 show various magnified cross section views of the exemplarysemiconductor die of FIG. 15 and possible variations thereof accordingto the present invention.

FIG. 20 shows a top view of another exemplary semiconductor die thatincorporates several features according to the present invention.

FIGS. 21-29 show various magnified cross section views of the exemplarysemiconductor die of FIG. 20 and possible variations thereof accordingto the present invention.

FIG. 30 shows a top view of another exemplary semiconductor die thatincorporates several features according to the present invention.

FIG. 31 show a magnified cross section view of the exemplarysemiconductor die of FIG. 30 according to the present invention.

FIGS. 32-34 show various cross section views of an exemplarysemiconductor die comprising a trench-shielded Schottky barrier diodedevice according to the present invention.

DETAILED DESCRIPTION

The techniques in accordance with the present inventions will bedescribed more fully hereinafter with reference to the accompanyingdrawings, in which exemplary embodiments of the invention are shown.This invention may, however, be embodied in different forms and shouldnot be construed as limited to the embodiments set forth herein. Rather,these embodiments are provided so that this disclosure is thorough andcomplete and fully conveys the scope of the invention to one skilled inthe art. In the drawings, the thicknesses of layers and regions may beexaggerated for clarity. The same reference numerals are used to denotethe same elements throughout the specification. The elements may havedifferent interrelationships and different positions for differentembodiments.

It will also be understood that when a layer is referred to as being“on” another layer or substrate, it can be directly on the other layeror substrate, or intervening layers may also be present. It will also beunderstood that when an element, such as a layer, a region, or asubstrate, is referred to as being “on,” “connected to,” “electricallyconnected to,” “coupled to,” or “electrically coupled to” anotherelement, it may be directly on, connected or coupled to the otherelement, or one or more intervening elements may be present. Incontrast, when an element is referred to as being “directly on,”“directly connected to” or “directly coupled to” another element orlayer, there are no intervening elements or layers present. It may beappreciated that the claims of the application may be amended to reciteexemplary relationships described in the specification or shown in thefigures with the support thereof being provided by the originalapplication. The term “and/or” used herein includes any and allcombinations of one or more of the associated listed items.

The terms used herein are for illustrative purposes of the presentinvention only and should not be construed to limit the meaning or thescope of the present invention. As used in this specification, asingular form may, unless definitely indicating a particular case interms of the context, include a plural form. Also, the expressions“comprise” and/or “comprising” used in this specification neither definethe mentioned shapes, numbers, steps, actions, operations, members,elements, and/or groups of these, nor exclude the presence or additionof one or more other different shapes, numbers, steps, operations,members, elements, and/or groups of these, or addition of these.Spatially relative terms, such as “over,” “above,” “upper,” “under,”“beneath,” “below,” “lower,” and the like, may be used herein for easeof description to describe one element or feature's relationship toanother element(s) or feature(s) as illustrated in the figures. It willbe understood that the spatially relative terms are intended toencompass different orientations of the device in use or operation inaddition to the orientation depicted in the figures. For example, if thedevice in the figures is turned over, elements described as “below” or“beneath” or “under” other elements or features would then be oriented“over” or “above” the other elements or features. Thus, the exemplaryterm “above” may encompass both an above and below orientation.

As used herein, terms such as “first,” “second,” etc. are used todescribe various members, components, regions, layers, and/or portions.However, it is obvious that the members, components, regions, layers,and/or portions should not be defined by these terms. The terms are usedonly for distinguishing one member, component, region, layer, or portionfrom another member, component, region, layer, or portion. Thus, a firstmember, component, region, layer, or portion which will be described mayalso refer to a second member, component, region, layer, or portion,without departing from the scope of the present invention.

FIG. 1 shows a top view of an exemplary semiconductor device 100 thatincorporates several features according to the present invention. Device100 comprises an active device region 120 located in the middle of thedie. Without loss of generality, device region 120 may implement avertical, trench-shielded power MOSFET device. As described and shownbelow in greater detail, the exemplary MOSFET device comprises an arrayof trenches interleaved with an array of mesas, insulated shieldelectrodes disposed in bottoms of the trenches, insulated gateelectrodes disposed in the trenches over the shield electrodes, sourceregions disposed in the mesas, source electrodes disposed on the sourceregions, and a drain electrode provided at the backside of thesemiconductor device. Device 100 further comprises a source metal layer110 (also called conductive layer 110) disposed over device region 120and electrically coupled to the source electrodes, and a source pad 111disposed over conductive layer 110 and electrically coupled thereto, andin turn to the source regions of the power MOSFET device. Source pad 111is adapted to receive an external connection, such as a wire bond orsolder bump that provides a source potential, and may have dimensions of150 microns on each side.

On each of the left and right sides of the device region 120, device 100further comprises a connection region 150 where electrical contact ismade to the gate and shield electrodes that are disposed in thetrenches. In each connection region, a stripe of conductive material,called a gate runner, is disposed parallel to a side of device region120 and spaced therefrom. The gate runner makes electrical contact withthe gate electrodes in the trenches, but is electrically isolated fromthe mesas that are interleaved between the trenches. Each gate runner iselectrically coupled to a gate pad 112 located at the bottom of the die.The gate pad 112 is adapted to receive an external connection, such as awire bond or solder bump that provides a gate potential. Also in eachconnection region 150, another stripe of conductive material, called ashield runner, is disposed parallel to the gate runner and spacedtherefrom. The shield runner makes electrical contact with the shieldelectrodes in the trenches, but is electrically isolated from portionsof the mesas that it overlies. The shield runners are electricallycoupled to the source conductive layer by an extension of the sourceconductive layer at the top of the die, or to a shield Pad and using anexternal connection.

A channel stopper is disposed at or near the periphery of the die, andis spaced from the shield runners and the top portion of device region120 by a gap. The channel stopper is conventional, and may comprise anisolated ring of metal that overlays and makes contact to a strip ofdoped semiconductor region that forms a ring around the periphery of thedie. Of significant note, die 100 does not comprise the conventionalfield termination structures that would normally appear in this gap.

FIG. 2 shows a magnified view of the upper left-hand corner of die 100,and FIG. 3 shows a magnified view of a portion along the left side ofthe die. The above features may be more clearly seen in these figures.FIGS. 2 and 3 provide reference points for a number of cross sections ofdie 100 that will be discussed next.

FIG. 4 is a cross section view of a portion of the die 100 that includesactive device region 120 and a first field termination region. Die 100comprises a N+ doped semiconductor substrate 102, one or moreepitaxially grown semiconductor n-type layers 104 (“epitaxialsemiconductor layer”) disposed on semiconductor substrate 102, an oxidelayer 106 disposed over epitaxial semiconductor layer 104 in theinactive and first field termination regions, a dielectric layer 107disposed over the oxide layer 106, a gate runner disposed over thedielectric layer 107 at the left portion of the inactive region, andconductive layer 110 (source metal layer 110) disposed over dielectriclayer 107 in the first field termination region. As is known in the art,a semiconductor region may be doped as a p-conductivity type (or“p-type”) region with a p-type dopant, or doped as an n-conductivitytype (or “n-type”) region with an n-type dopant. In device region 120,device 100 further comprises a plurality of trenches 122 disposed in theepitaxial semiconductor layer, and a plurality of mesas 130 ofsemiconductor material interleaved between trenches 122. Portions of thedielectric layer 107 cover the tops of trenches 122, and the sourcemetal layer 110 extends over active device region 120 and makes contactto mesas 130. The structure of trenches 122 and mesas 130 is describedbelow with reference to FIG. 5. In the first termination region, device100 further comprises a first end trench 222, a first end mesa 230disposed between first end trench 222 and the leftmost trench 122 ofdevice region 120, and a second end mesa 238 disposed to the left offirst end trench 222.

FIG. 5 is a magnified cross section view of the first field terminationregion and device region 120 shown in FIG. 4. Each trench 122 hasopposing sidewalls lined with a dielectric layer 123, a shield electrode124 disposed between the sidewalls near the bottom the trench, adielectric layer 125 disposed over shield electrode 124, and a gateelectrode 126 disposed over the dielectric layer and between the trenchsidewalls. Each mesa 130 comprises a p-type well 134 disposed in theepitaxial semiconductor layer 104 adjacent to the top surface of layer104, a pair of source (n+ type) regions 136 disposed in p-well 134adjacent to two adjacent trenches 122 and the top surface of theepitaxial semiconductor layer 104, and an N-drift region 132 disposedbelow p-well 134. (A p-type well, a p-type region, and a p-doped regiondescribed herein may be referred to as “a well region of a firstconductivity type” or “a well region of a second conductivity type”,depending upon the context of the discussion or the context of theclaim.) A small trench is formed in the center of mesa 130 to allow thesource metal layer 110 to make electrical contact to the source regions136, and to the p-well 134 at a small region 135 of enhanced p+ doping.Electron current is conducted vertically through the device, from sourceregions 136, through an inverted region of the p-well 134 adjacent tothe gate oxide 123, further through drift region 132, and down to the N+substrate 102 and the drain contact, with the amount of current beingmodulated by the potential on the gate electrodes 126 in trenches 122under normal operating conditions. The shield electrodes 124 areelectrically coupled to the potential of the source metal layer 110 andsource regions 136, and shield the p-well from high electric fields.

When the potential on the gate electrode 126 is set to place the devicein an off state (e.g., typically a potential of around zero volts), asubstantial current can still flow during a breakdown condition wherethe drain potential is very high relative to the source potential. Inthe breakdown condition, high electric fields develop in a region ineach mesa 130, and this high electric field generates avalanche carriers(both holes and electrons). The voltage at which this breakdowncondition occurs is called the breakdown voltage. The breakdown voltageof the mesa may be raised by selecting the shield oxide thickness, thewidth of the mesa, and the doping of the N-drift region 132 to cause theN-drift region 132 to be normally depleted of electrons. This causes theelectric field during off-state conditions to be more uniformlydistributed along the centerline of the mesa (e.g., a square-shapedelectric field profile), thereby reducing the peak electric field (andthereby increasing the voltage at which avalanche carriers can begenerated). The condition whereby the N-drift region 132 is depleted ofelectrons is called the “charge-balanced condition.” The charge-balancedcondition can be generally achieved when the product of the mesa widthand the doping of the N-drift region 132 is in the range of 1×10¹¹ cm²to 1×10¹³ cm².

Ideally, one would like the breakdown voltage to be determined by thebreakdown process associated with mesa 130. However, various parasiticbreakdown mechanisms occur in various field termination regions of thedevice at lower voltages, and thereby set the overall breakdown voltageof the device to a lower value than that caused by the breakdown processin mesa 130. One such potential parasitic mechanism can occur at thethin portion of dielectric layer 123 in the outermost trench of a deviceregion 120 designed with a termination region of the prior art. Withouta mesa 130 next to it, this thin dielectric layer would be exposed tothe potential of the n-type epitaxial layer, which is coupled to thedrain potential, and a large electric field can develop across the thindielectric layer, which can cause a breakdown to occur at a relativelylow voltage.

One feature according to the present invention addresses this parasiticbreakdown mechanism by disposing an end trench 222 on either side of thearray of active trenches 122 of the device region 120. Trench 222 hasopposing sidewalls lined with a dielectric layer 223, a shield electrode124 disposed between the sidewalls near the bottom the trench, adielectric layer 125 disposed over shield electrode 124, and a gateelectrode 226 disposed over dielectric layer and between the trenchsidewalls. However, unlike the dielectric layer 123 of trench 122,dielectric layer 223 is thicker along the sidewall that faces the n-typeepitaxial layer than along the side wall that faces the trenches 122 ofdevice region 120, as measured along the depth of gate electrode 226.The thicker region is indicated by reference number 227 in the figure.The thicker dielectric reduces the electric field in the dielectriclayer, and thereby increases its breakdown voltage. Trench 222 may havethe same width as each of trenches 122, and gate electrode 226 may havea smaller width than gate electrode 126.

The above trenches 222, 122 and mesas 238, 230, and 130 are indicated inthe top plan view of FIG. 3 near the cross-section line indication forFIG. 4. A similar arrangement of trenches and mesas is present on theopposite side of device area 120, as indicated by these referencenumbers in the top plan view of FIG. 2. While the pair of trenches 222bound the array of trenches 122 and mesa 130 on either side of the array(e.g., the top and bottom of the array), they do not encircle the arrayor have portions that bound the right and left sides of the array. Thatis, there is no perpendicular termination trench at the ends of trenches122 and mesas 130. (It should be noted that trenches 122 and mesas 130continue to run under the gate runner.) Related to this, device 100 doesnot have a p-doped region disposed at the ends of trenches 122. Each ofthese features reduces the size of the field termination areas, andenables the active area to be increased and/or the die size to bedecreased. While the above configuration is for a device region 120 thatprovides a MOSFET device, it can also apply to other device types, suchas IGBT devices and rectifiers, particularly those devices in which theabove-described charge-balanced condition exists.

Referring back to FIG. 5, as another feature of the present invention,the broad mesa 238 to the left of end trench 222 may optionally have ap-type region 239 disposed at its surface, next to dielectric layer 223.P-type region 239 may be directly decoupled from any potential, and leftin a floating state, or may be electrically coupled to the source metallayer 110 and the source potential (e.g., it may be grounded). In eithercase, region 239 reduces the electric fields around the top right cornerof broad mesa 238, to eliminate this area as a source of parasiticbreakdown mechanism. When electrically coupled to the source potential,p-type region 239 further shields dielectric 223 from the drainpotential in area 227. P-type region 239 may be manufacturing during thesame process that manufactures p-wells 134.

As another feature of the present invention, the mesa 230 to the rightof end trench 222 may be configured as a p-n diode rather than a MOSFETtransistor. For this, it may comprise a p-well 134 and enhanced p+doping region 135, but no source regions 136. The p-n diode is biased inan off state during normal operations of the MOSFET transistor of deviceregion 120. Mesa 230 provides additional spacing distance between broadmesa 238 and the first active mesa 130 that serves to buffer thepotential in broad mesa 238 from the first active mesa 130. This enablesthe electrical characteristics of the first mesa 130 to be substantiallythe same as the interior mesas 130.

FIG. 6 shows a magnified cross section view of a portion of a variationof the exemplary semiconductor die of FIG. 1 according to the presentinvention. The features in the magnified cross section of FIG. 6 are thesame as those shown in the magnified cross section of FIG. 5, with theaddition of a perimeter trench 220, dielectric layer 221, and shieldelectrode 124. Trench 220 has opposing sidewalls lined with dielectriclayer 221, and a shield electrode 224 disposed between the sidewalls,preferably from the top of the epitaxial semiconductor layer to near thebottom of the trench. Shield electrode 224 is electrically coupled tothe source metal layer 110. Shield electrode 224 provides additionalshielding of the drain potential for end trench 222 and gate electrode226. A mesa 230′ is defined between trenches 220 and 222. P-doped region239 may be included in mesa 230′ between trenches 220 and 222, oromitted. Also, a p-doped region 234 that is disposed in mesa 230′ andthat extends from trench 222 to trench 220 may be used. Along withregion 234, a p-doped region 239′ may be included on the left side oftrench 220. A pair of trenches 220 bound the array of trenches 122, 222and mesas 130, 230, 230′ on either side of the array (e.g., the top andbottom of the array), but they do not encircle the array or haveportions that bound the right and left sides of the array. This featurereduces the size of the field termination areas, and enables the activearea to be increased and/or the die size to be decreased. While theabove configuration is for a device region 120 that provides a MOSFETdevice, it can also apply to other device types, such as IGBT devicesand rectifiers, particularly those devices in which the above-describedcharge-balanced condition exists.

FIG. 7 shows a cross section view of the aforementioned trenches andmesas in connection area 150 just adjacent to the device area 120, alongthe cut line 7-7 defined in FIG. 3. A thin amount of oxide layer 106 isdisposed over each of mesas 130 and 230, and dielectric layer 107 isdisposed over gate electrodes 126 and 226, as well as the underlyingoxide layer 106. The optional perimeter trench 220, shield electrode221, and dielectric layer 221 are shown in dotted outline. There is nochange to the configuration of p-doped region 239 with respect to itsneighboring elements with respect to the cross sections shown in FIGS. 4and 5.

FIG. 8 shows a cross section view of the aforementioned trenches andmesas in connection area 150 under the gate runner, along the cut line8-8 defined in FIG. 3. A thin amount of oxide layer 106 is disposed overeach of mesas 130 and 230. The tops of gate electrodes 126 and 226 areelectrically coupled together by a conductive riser 126R. Riser 126R iselectrically isolated from mesas 130, 230 by thin portions of oxide 106.In typical embodiments, riser 126R and gate electrodes 126, 226 areformed of the same material, such as polysilicon. In prior crosssections, the riser 126R is removed. The metal gate runner makes contactto riser 126R at locations over gate electrodes 126 and 226, which areseparated by islands of dielectric 107. The islands may be omitted. Thegate electrodes 126 and 226 terminate in the trenches at this point. Theoptional perimeter trench 220, shield electrode 221, and dielectriclayer 221 are shown in dotted outline. There is no change to theconfiguration of p-doped region 239 with respect to its neighboringelements with respect to the cross sections shown in FIGS. 4 and 5.

FIG. 9 shows a cross section view of the aforementioned trenches andmesas in connection area 150 between the gate runner and the shieldrunner, along the cut line 9-9 defined in FIG. 3. Only the shieldelectrodes 124 and 224 are present in trenches 122 and 222, with oxidelayer 106 covering them and the mesas 130 and 230.

FIG. 10 shows a cross section view of a trench 122 in connection area150 along a cut-line 10-10 defined in FIG. 3, with the cut-line 10-10being perpendicular to cut lines 4-4, 7-7, 8-8, and 9-9. Gate electrode126 and shield electrode 124 are disposed in the trench, with gateelectrode 126 having a riser 126R that makes electrical contact to thegate runner, and with shield electrode 124 having a riser portion 124Rthat makes electrical contact to the shield runner. Dielectric layer 125is disposed between shield electrode 124 and gate electrode 126 alongtheir facing horizontal dimensions, a dielectric layer 125S is disposedbetween electrodes 124 and 126 along their facing side dimensions, and acorner patch 125C of dielectric is disposed between the outside cornerof gate electrode 126 and the inside corner of shield electrode 124.Shield electrode 124 has an outside corner that is disposed adjacent toa patch 123C of dielectric material, and a vertical side that isdisposed adjacent to a side layer 123S of dielectric material.

Radius of curvature effects significantly increase the electric fieldsin the regions next to the outside corners of shield electrode and gateelectrode 126. The thickness of dielectric patch 123C is generallysufficient to prevent breakdown of the dielectric material. However,dielectric patch 125C and dielectric side layer 125S around gateelectrode 126 are relatively thin, and can be a source of breakdown forthe end trench 222 (shown in FIG. 8). The inclusion of optional shieldelectrode 224 and trench 220 shields dielectric patch 125C anddielectric side layer 125S from the drain potential coupled tosemiconductor layer 104, and thereby reduces the electric fields indielectric patch 125C and dielectric side layer 125S. Another possiblearea of breakdown due to radius of curvature effects, particularly forhigh voltage devices, is present in dielectric side layer 123S at theend of shield riser portion 124R, as indicated by point “A” in FIG. 10.This potential breakdown can be significantly mitigated by extending thetopside shield runner metal (which is a conductive trace) overdielectric side layer 123S and beyond the end of trench 122 by adistance L1. Distance L1 may be equal to or greater than the depth oftrench 122. For lower voltage device applications, the possibility ofbreakdown at point “A” is very low, and the topside shield runner metaldoes not extend over dielectric side layer 123S or beyond the end oftrench 122, as indicated by edge “B” in the figure. This configurationresults in a thinner shield runner, and a smaller die.

FIG. 11 shows a cross section view of a mesa 130 in connection area 150along a cut-line 11-11 defined in FIG. 3, with the cut-line 11-11 beingperpendicular to cut lines 4-4, 7-7, 8-8, and 9-9. The p-doped well 134and the riser 126R for the gate electrodes 126 are shown at the right ofthe figure. Typically, p-doped well 134 is electrically coupled to thepotential of the source and shield, but may be in a floating state forsome instances where the region is used in a field termination area.P-doped well 134 has an end that terminates at or under gate riser 126R(which is an electrical trace). For reference, the outlines of gateelectrode 126 and shield electrode 124 are shown in dashed lines. Thereis a possibility of breakdown occurring at the end of p-doped well 134due to radius of curvature effects. However, the gate electrodes 126 andshield electrodes 124 that are disposed on either side of p-doped well134 normally deplete the portion of n-doped mesa 130 that is adjacent tothe end of well 134, thereby significantly reducing the potential andelectric fields around the end of well 134. However, electric fields ofreduced amounts are still present around the ends of well 134, and canconcentrate at the end of well 134 in a radial manner (i.e., radius ofcurvature effect). However, with the configuration shown in FIG. 11, theend of well 134 is substantially shielded by gate riser 126R, andsubstantially reduces the radius of curvature effects at the region'send. Specifically, conductive riser 126R directs the electric fieldspresent in mesa 130 at the end of well 134 away from the end of well 134and towards itself, thereby reducing the radial concentration of theelectric field. This shielding would be lost if the end of well 134 wereto extend to the left side of the lower portion of conductive riser126R. This shielding effect is best obtained if the end of well 134 isspaced from the most distal side (e.g., left side) of the lower portionof conductive riser 126R by a distance L2, where L2 is equal to orgreater than the depth of well 134. In preferred implementations, L2 isequal to or greater than the depth of well 134 plus the separationdistance between well 134 and conductive riser 126R, where theseparation distance is equal to the thin portion of oxide layer 106 forthe configuration shown in the figure.

As mentioned above, the gate electrodes 126 and shield electrodes 124that are disposed on either side of p-doped well 134 normally depletethe portion of the n-doped mesa 130 that is adjacent to the end of well134, thereby significantly reducing the potential and electric fieldsaround the end of well 134. To achieve this benefit, the end of p-dopedregion should be spaced from the ends of the shield electrodes 124, orthe ends of the trenches 122, by at least a distance L3, as shown inFIG. 12. Distance L3 may be equal to the depth of trench 122, or may beequal to the difference between the depth of trench 122 and the depth ofwell 134. It is possible for well 134 to extend beyond gate riser 126R,as is shown in FIG. 13, and further possible for the end of well 134 tobe disposed under the shield runner (and field plate). If the shieldrunner is disposed near or over the end of well 134, it can provideshielding to mitigate the radius of curvature effects at the end of well134 in the same manner that gate riser 126R provided shielding, aspreviously described with reference to FIG. 11. However, for low andmoderate voltage applications, the shield runner need not be disposedover the end of p-doped well 134. While it is preferable that no otherp-doped regions are disposed between the end of well 134 and the ends ofthe adjacent trenches, a more lightly p-doped region (well) 144, asshown in FIG. 11, may be disposed between the end of well 134 and theends of the adjacent trenches. The more lightly p-doped region 144 has alower dopant dose, as measured across a cross section of the mesa width,than that of well 134. Said another way, the more lightly p-doped region144 has a lower integrated charge resulting from the dopant, as measuredacross a cross section of the mesa width, than that of well 134. Withthe above configurations, there is no need for a termination trenchrunning perpendicular to the ends of trenches 122, as would be done inprior art configuration. All of the above configurations of the end ofp-doped well 134 may be applied to trench-shielded Schottky barrierdiode devices, where the above spacing distances are applied to the endof the Schottky metal, or if a p-doped region like region 239′ shown inFIG. 6 is used around the perimeter of the Schottky metal. An exemplaryembodiment of a trench-shielded Schottky barrier diode device employingthese inventive aspects is described below with reference to FIGS.32-34.

Referring back to FIG. 10, it may be seen that the shield runner metalmakes electrical contact with a top surface of the riser portion 124R ofshield electrode 124 at a level that is at or below the top surface ofepitaxial layer 104. This feature is also shown in FIG. 14, which is across section that is perpendicular to the cross section of FIG. 10. Asseen in FIG. 14, the contacts from the shield runner metal to the riserportions 124R are made through contact openings formed throughdielectric layer 107 and oxide layer 106. This configuration has theadvantages of reduced electrical contact resistance, and asimplification of the manufacturing process. In the conventionalmanufacturing processes, a polysilicon etch mask and etching step areused to define a polysilicon bus structure between the shield runnermetal and the shield electrodes 124, 224. However, the above simplifiedcontact structure can be defined by modifying an earlier mask that isused in the process, such as the mask used to define the contacts fromthe source metal to enhanced doping regions 135 and source regions 136shown in FIG. 5. Accordingly, the mask and etching step that areconventionally used to define the above-described polysilicon busstructure may be eliminated.

When making a high current capacity device, several instances of deviceregion 120 may be used rather than one large device region 120. Theinstances of device region 120 are electrically coupled in parallel, andthis configuration provides a low-resistance path to the centers of theshield electrodes 124 and the centers of the gate electrodes 126compared to the case where one large instance of device regions 120 isused. FIG. 15 shows a top schematic plan view of a semiconductor device200 disposed on a semiconductor die. Device 200 comprises a top deviceregion 120A disposed over a bottom device region 120B, a top connectionregion 150 (as previously described above) disposed above top deviceregion 120A, a bottom connection region 150 disposed below device region120B, a middle connection region 250 disposed between device regions120A and 120B. Device regions 120A and 120B are instances ofpreviously-described device region 120. There is a gate runner andshield runner in each connection region 150, and two gate runners andone shield runner in middle connection region 250. The gate runners areelectrically coupled to a gate pad 212 by a gate feed. Source metallayer 110 is disposed over device regions 120A and 120B, an electricallycoupled to the shield runners and two source pads 111. A plurality ofinterleaved trenches 122′ and mesas 130′ are disposed in thesemiconductor epitaxial layer, and within the device regions 120A, 120Band connection regions 150, 250, as illustrated by the dashed lines atthe right side of the figure. Only the first few trenches and mesas areshown for visual clarity in the figure, but the arrow symbols to theleft of the array schematically indicate that the array of interleavedtrenches and mesas extends to the left sides of the device regions 120A,120B and connection regions 150, 250. Trenches 122′ are substantiallythe same as trenches 122, except they run continuously through deviceregions 120A, 120B and connection regions 150, 250. Mesas 130′ aresubstantially the same as mesas 130, except they run continuouslythrough device regions 120A, 120B and connection regions 150, 250. Achannel stopper structure surrounds regions 120A, 120B, 150, and 250 atthe perimeter of the die, and is separated from regions 120A, 120B, 150,and 250 by a gap. This gap is the same as the gap shown an identified inFIG. 11.

FIG. 16 shows a cross sectional view of connection region 250 along thecut line 16-16 shown in FIG. 15. The cross section is taken along atrench 122′. The components are the same as the components describedabove with reference to FIG. 10, with the exceptions that a mirror setof a gate electrode 126, gate riser 126R, and gate runner appear at theleft side of the figure, that the dielectric patch 123C and dielectricside 123S are not present, and that trench 122′, dielectric layer 123′,shield electrode 124′, and shield riser 124R′ are mirrored over to theleft side and run continuously along the cross section from left toright. The gate runners make electrical contact to the gate risers 126Rof the gate electrodes 126, but are electrically insulated from theshield metal runner and the shield riser 124R′ and the shield electrode124′. The shield runner metal makes electrical contact to the shieldriser 124R′ and shield electrode 124′, and is electrically insulatedfrom the gate runners, gate risers 124R, and gate electrodes 124. Theabove trench construction eliminates the imbalances in the electricfields and potentials that occur in the mesa regions of device 100 thatare next to the trench discontinuities in connection regions 150, andthus eliminate the corresponding localized charge imbalances. Thisconstruction is a departure from prior art constructions, which wouldinclude elaborate field termination structures in the middle ofconnection region 250.

FIG. 17 shows a cross sectional view of connection region 250 along thecut line 17-17 shown in FIG. 15. The cross section is taken along a mesa130′. The components are the same as the components described above withreference to FIG. 10, with the exception that a mirror set of a p-dopedwell 134, a gate electrode 126, a gate riser 126R, and a gate runnerappear at the left side of the figure. Outlines of the positions ofshield electrode 124′ and gate electrodes 126 are shown in dashed lines.Similar to device 100, each p-doped well 134 is typically electricallycoupled to the potential of the source and shield, but may be in afloating state for some instances where the region is used in a fieldtermination area. Each p-doped well 134 has an end that preferablyterminates at or under a respective gate conductive riser 126R (which isan electrical trace). There is a possibility of breakdown occurring atthe end of each p-doped well 134 due to radius of curvature effects.However, the gate electrodes 126 and shield electrodes 124 that aredisposed on either side of the p-doped well 134 normally deplete theportion of each n-doped mesa 130 that is adjacent to the end of the well134, thereby significantly reducing the potential and electric fieldsaround the end of the well 134. However, electric fields of reducedamounts are still present around the ends of the well 134, and canconcentrate at the end of the well 134 in a radial manner (i.e., radiusof curvature effect). However, with the configuration shown in FIG. 17,the ends of the wells 134 are substantially shielded by the gateconductive risers 126R, and the configuration substantially reduces theradius of curvature effects at the regions' ends (as previouslydescribed above for device 100 with reference to FIG. 11). Thisshielding would be lost if the end of a well 134 were to extend beyondthe distal side of the lower portion of the conductive riser 126Rdisposed above it. This shielding effect is best obtained if the end ofthe well 134 does not extend beyond the distal side of the lower portionof the conductive riser 126R, and is further spaced from the most distalside of the lower portion of conductive riser 126R by a distance L2,where L2 is equal to or greater than the depth of well 134. In preferredimplementations, L2 is equal to or greater than the depth of well 134plus the separation distance between well 134 and conductive riser 126R,where the separation distance is equal to the thin portion of oxidelayer 106 for the configuration shown in the figure.

FIG. 18 shows a cross sectional view of a variation 250′ of connectionregion 250 that includes an electrically floating p-doped well 134Cdisposed in epi layer 104, and under the shield runner metal. (Thep-doped region is made floating by not making a direct electricallyconnection between it and a conductive layer that is adapted to receivean electrical potential from an external circuit.) The floating p-dopedwell 134C acts as a buffer shield between epi layer 104 and the portionof the oxide layer 106 above it. The portion of oxide layer 106 betweenthe shield runner metal and epi layer 104 can experience high electricfields since the shield runner metal is usually at ground potential andthe underlying portion of epi layer 104 is usually at the drainpotential. To reduce radius of curvature effects at the ends of p-dopedwell 134C, the ends may be disposed near or under the gate risers 126R.

FIG. 19 shows a cross sectional view of another variation 250″ ofconnection region 250 that includes a continuous p-doped well 134′ inplace of the two wells 134 shown in FIG. 17. Continuous p-doped well134′ extends from device region 120A to device region 120B, and throughconnection region 250″, and is electrically coupled to the source metallayer 110 (and, in turn, to the shield runner metal). There is no radiusof curvature effect associated with continuous p-doped well 134′ becausewell 134′ does not have a side edge or corner. Continuous p-doped well134′ also acts as a buffer shield between epi layer 104 and the oxidelayer 106 above it. As indicated above, the portion of oxide layer 106between the shield runner metal and epi layer 104 can experience highelectric fields since the shield runner metal is usually at groundpotential and the underlying portion of epi layer 104 is usually at thedrain potential.

In all of the embodiments illustrating connection regions 150, 250,250′, and 250″, it may be appreciated that each connection region has aconfiguration of one more material bodies with the adjacent portions ofmesas 130, 130′ which produces an inactive device. A material body maycomprise a doped region, a dielectric layer, a conductive layer, etc. Incontrast, each device region 120, 120A, 120B has a configuration of onemore material bodies with portions of the mesas 130, 130′ which producesan active device.

Another embodiment is now described and illustrated with reference tosemiconductor device 300 illustrated in FIG. 20. Semiconductor device300 has substantially the same floor plan (top plan view) assemiconductor device 100 shown in FIGS. 1-3. FIG. 20 is a magnified viewof a portion along the left side of the die of semiconductor device 300,similar to the magnified view of the left side portion of device 100shown in FIG. 3. Semiconductor device 300 comprises substantially thesame elements as device 100 arranged in substantially the same way, andfurther comprises a perimeter trench 320 that encircles the array oftrenches 122,222 and mesas 130,230 previously described above. FIGS. 21and 22 shows cross sections of perimeter trench 320 and the array oftrenches 122,222 and mesas 130,230 along the bottom of the array, andalong the cut lines 21-21 and 22-22 shown in FIG. 20. Perimeter trench320 comprises a dielectric layer 321 lining its opposing side walls, anda conductive electrode 324 disposed in the trench. Conductive electrode324 may be electrically coupled to a conductive layer, such as theshield runner, to receive a ground potential, or may be decoupled fromany conductive layer bearing a potential, thereby being at a floatingpotential. Perimeter shield 320 is spaced from trench 222 by a distancethat is on the order of the spacing between adjacent trenches 122. A gapregion 330 is disposed between perimeter shield 320 and trench 222. Noelectrical potentials are coupled to the top of gap region 330 by anyconductive layer, and the potential in gap region 330 is floating. Whenthe perimeter trench electrode 324 is at a floating potential, thepotentials on it and the floating gap region 330 can float to setequalizing potentials with respect to the drain potential, and canthereby reduce sensitivity to charge imbalances in gap region 330. As aresult, achieving the charge balance condition in gap region 330 becomeseasier than if these gap regions 330 were fixed at source potential byconventional grounded p-wells. Substantially the same benefits areachieved when the perimeter trench electrode 324 is coupled to a groundpotential. The width of gap region 330 may be equal to or less than 1.25times the width of mesa 130, and the widths of gap region 330 along thevarious sides of perimeter trench 320 may be different. For example, thewidth of gap region 330 along the left and right vertical sides ofperimeter trench 320 (and the main array of trenches 122 and mesas 130)may be smaller than the width of gap region 330 along the top and bottomhorizontal sides of perimeter trench 320 (and the main array).

FIGS. 23 and 24 are cross sections showing perimeter trench 320 alongthe ends of the primary trenches 122 and mesas 130, and along the cutlines 23-23 and 24-24 shown in FIG. 20. The cross-sections of FIGS. 23and 24 are substantially the same as the cross sections of FIGS. 10 and11 for device 100, plus the addition of perimeter trench 320 and gapregion 330. Elements 102-107, 120, 122, 123, 123C, 123S, 124, 124R, 125,125C, 125S, 126, 126R, 134, 150, the shield runner, the gate runner, andchannel stopper have their same relative relationships with respect toone another. As indicated above, one possible area of breakdown due toradius of curvature effects, particularly for high voltage devices, ispresent in dielectric side layer 123S at the end of shield riser portion124R, as indicated by point “A” in FIG. 23 (the same as was for FIG.10). As previously described, this possible area of breakdown can besignificantly mitigated by extending the topside shield runner metal(which is a conductive trace) over dielectric side layer 123S and beyondthe end of trench 122 by a distance L1. Distance L1 may be equal to orgreater than the depth of trench 122. Perimeter trench 320 alsomitigates the possible area of breakdown by moving electric fields awayfrom point A. As indicated above, when the perimeter trench electrode324 is at a floating potential, the potentials on it and the floatinggap region 330 can float to set equalizing potentials with respect tothe drain potential, and can thereby reduce sensitivity to chargeimbalances in gap region 330. As a result, achieving the charge balancecondition in gap region 330 becomes easier than if these gap regions 330were fixed at source potential by the conventional grounded p-dopedwells. Substantially the same benefits are achieved when the perimetertrench electrode 324 is coupled to a ground potential, which may be doneby a contact via 325 of conductive material disposed between shieldelectrode 324 and the shield runner metal, with the conductive contactvia 325 being electrically coupled to both the shield runner and shieldelectrode 324.

The same above benefits can be substantially achieved with the use of afloating p-doped well 334 in floating gap region 330. This embodiment isillustrated by FIGS. 25-28, which are the same cross-sections as FIGS.21-24, with the exception of the addition of the floating p-doped well334. No ground potential voltage is coupled to well 334. FIG. 29 showsfloating p-doped well 334 in the portion of gap region 330 that isdisposed between trench 222 and the perimeter trench 320. Well 334extends left to be adjacent to perimeter trench 320. While well 334 hasbeen shown as a continuous stripe that is disposed adjacent to perimetertrench 320, it may be appreciated that well 334 may be segmented (havinggaps in the continuous stripe). The ends of any segmented region of well334 may be disposed under a shield runner and other conductive traces tominimizing radius of curvature effects.

When using perimeter trench 320, either with a grounded or floatingelectrode 324, there can be a charge imbalance at the corner turns ofperimeter trench 320. This is because gap region 330 sees two sides ofperimeter trench 320 instead of one, as shown in the magnified top planview of FIG. 30. The electrode 324 of the perimeter trench tries todeplete more charge than that present in the corner area of gap region330. This charge imbalance can be addressed by shortening the length oftrench 222 that is adjacent to the horizontal leg of perimeter trench320. This presented as device 400, which is the same as device 300except for the shorting of the trench. The shortening of trench 222reduces the charge imaging effect of trench 222 on the corner of gapregion 330, and thereby compensates for the over imaging of electrode324 of the perimeter trench. FIG. 31 shows a cross section of shortenedtrench 222, along with an outline of the un-shortened length forcomparison. The end of trench 222 is spaced further from perimetertrench 320 than the ends of trenches 122. The p-well 334 of device 300may be added to device 400, with any of the above-describedconfigurations of device 400. The p-well 334 for device 400 may be at afloating potential or at a fixed potential (e.g., ground potential).

As briefly indicated in the discussion of device 100 and FIGS. 1-14,some inventive aspects of device 100 may be applied to trench-shieldedSchottky barrier diode devices. A Schottky diode device may have asimilar construction as device 100, as illustrated in FIGS. 1-14, andmay include the same components as device 100 but without the need forgate electrodes 126 and 226, gate runners, gate pads, source regions136, the portions of dielectric layers 106 and 107 disposed over themesas, and well regions 134. FIGS. 32-34 show cross sections of anexemplary Schottky diode device 100″ according to aspects of the presentinvention. FIG. 32 shows a cross section through the device region 120of device 100″ similar to the cross section shown in FIG. 6 for device100. Device 100″ comprises trenches 122″ and 222″ that are similar totrenches 122 and 222, respectively, except that trenches 122″ and 222″need not comprise gate electrodes 126 and 226, respectively, and maycomprise shield electrodes 124″ that extend to the top of epitaxiallayer 104, or near thereto, and which are taller than shield electrodes124. (In other Schottky embodiments, gate electrodes 126 and 226, alongwith the gate runners, may be used, in which case they are typicallycoupled to the potential of the source metal layer 110.) Device 100″also comprises trench 220, mesas 130, 230, and 230′, dielectric layer106 and 107 in the field termination regions, and source metal layer 110of device 100. As a difference with device 100, the source metal layerand the shield runner may be merged together as there is not gate runnerbetween them. Source metal layer 110 contacts the tops of mesas 130 toprovide Schottky barrier contacts therewith. A surface compensationimplant may be disposed at the tops of mesas 130 to adjust theelectrical characteristics (e.g., barrier height) of the Schottkycontacts, as is known to do in the art. A p-type well 134″ may bedisposed at the top of mesa 230 to provide a p-n junction diode having ahigher reverse-bias breakdown voltage than the Schottky barrier devicesin mesas 130. Well 134″ may have a higher doping than well 134′ so thatenhanced doping region 135 may be omitted, or enhanced doping region135, or a layer of enhanced doping at the top of mesa 230, may beincluded to provide a good conductive connection with source metal layer110. In another implementation of device 100, well 134″ may be omitted,and dielectric layers 107 and/or 106 may be extended over the top ofmesa 230 to electrically insulate it from source metal layer 110, thusmaking it like mesa 230′. In each of the implementations for mesa 230,mesa 230 and trenches 222″ and 122″ serve to shape the electricpotential and field patterns as described above for device 100 toimprove the overall breakdown voltage characteristics of device 100″.

FIG. 33 shows a cross section of a trench 122″ in connection area 150along a cut-line 10-10 defined in FIG. 3. The cross section of FIG. 33is similar to the cross section shown in FIG. 10 for device 100. Shieldelectrode 124″ is disposed in the trench, with shield electrode 124making electrical contact to the shield runner and source metal layer110. Shield electrode 124″ has an outside corner that is disposedadjacent to a patch 123C of dielectric material, and a vertical sidethat is disposed adjacent to a side layer 123S of dielectric material.As previously described, radius of curvature effects significantlyincrease the electric fields in the regions next to the outside cornersof shield electrode. A possible area of breakdown due to radius ofcurvature effects, particularly for high voltage devices, is present indielectric side layer 123S at the end of shield electrode 124″, asindicated by point “A” in FIG. 33. This potential breakdown can besignificantly mitigated by extending the topside shield runner metal(which is a conductive trace) over dielectric side layer 123S and beyondthe end of trench 122″ by a distance L1. Distance L1 may be equal to orgreater than the depth of trench 122″. For lower voltage deviceapplications, the possibility of breakdown at point “A” is very low, andthe topside shield runner metal need not extend over dielectric sidelayer 123S or beyond the end of trench 122″, as indicated by edge “B” inthe figure. This configuration results in a thinner shield runner, and asmaller die.

FIG. 34 shows a cross section of a mesa 130 in connection area 150 ofdevice 100″ along a cut-line 11-11 defined in FIG. 3. This cross sectionis similar to the cross sections shown in FIGS. 11-13 for device 100. Asshown in FIG. 34, source metal 110 covers a portion of the top of mesa130 (shown at the right in the figure) to provide the Schottky barriercontact. The location of the shield electrodes 124″ on either side ofthe mesa 130 are shown in dashed outlines. Dielectric layers 106 and 107separate the shield runner and field plate from the mesa. There is apossibility of breakdown occurring at the end edge of the source metallayer 110, where it contacts mesa 130, due to radius of curvatureeffects. This end edge is the end of the Schottky barrier metal (i.e.,that part of the metal that forms a Schottky barrier with thesemiconductor), and is indicated as point “C” in the figure. The shieldelectrodes 124″ that are disposed on either side of mesa 130 normallydeplete the portion of the mesa that is adjacent to the end edge ofsource metal layer 110, thereby significantly reducing the potential andelectric fields around the end edge. To achieve this benefit, the endedge should be spaced from the ends of the shield electrodes 124″, orthe ends of the trenches 122″, by at least a distance L3, as shown inFIG. 34. Distance L3 may be equal to the depth of trench 122″. With thisconfiguration, there is no need to dispose a p-doped region in mesa 130at the end edge of the Schottky barrier metal at point C, as may be donein prior art configurations. However, a p-doped region may be disposedin mesa 130 near the end edge of the Schottky barrier metal, asindicated by the dashed outline of a p-doped region 334′. If p-dopedregion 334′ is used, it should be spaced from the ends of the shieldelectrodes 124″, or the ends of the trenches 122″, by at least the abovedistance L3.

As can be seen in each of FIGS. 33 and 34, there is no perpendiculartermination trench disposed at the top surface of layer 104,perpendicular to the ends of trenches 122″ and shield electrode 124″.This is the same termination configuration as that shown above fordevice 100, and reduces the die size. However, if desired, aperpendicular termination trench or a perimeter trench may be added todevice 100″.

While the above embodiments have been illustrated with n-type epi layersand p-type doped well regions, it may be appreciated that the inventionsand embodiments may be practiced with p-type epi layers and n-type dopedwell regions. In other words, the inventions and embodiments may bepracticed with the doping polarities of the layers and regions reversed.

While the various embodiments of the inventions are mostly described inthe context of N-channel shielded gate MOSFET, these embodiments may beimplemented in a variety of other types of devices, such as, P-channelMOSFET (i.e., a transistor similar in structure to the MOSFETs describedabove except that the conductivity type of all silicon regions arereversed); N-channel shielded gate IGBT (i.e., a transistor similar instructure to the MOSFETs described above except that a P-type substrateis used instead of the N-type substrate); P-channel shielded gate IGBT(i.e., a transistor similar in structure to the MOSFETs described abovebut with silicon regions of opposite conductivity except the substrateis kept N-type); shielded gate synchronous rectifiers (i.e., integratedshielded gate MOSFET and Schottky); TMBS rectifiers, and superjunctionvariations of the above devices (i.e., devices with columns ofalternating conductivity type silicon).

Any recitation of “a”, “an”, and “the” is intended to mean one or moreunless specifically indicated to the contrary.

The terms and expressions which have been employed herein are used asterms of description and not of limitation, and there is no intention inthe use of such terms and expressions of excluding equivalents of thefeatures shown and described, it being recognized that variousmodifications are possible within the scope of the invention claimed.

Moreover, one or more features of one or more embodiments of theinventions may be combined with one or more features of otherembodiments of the invention without departing from the scope of theinvention.

While the present inventions have been particularly described withrespect to the illustrated embodiments, it will be appreciated thatvarious alterations, modifications, adaptations, and equivalentarrangements may be made based on the present disclosure, and areintended to be within the scope of the invention and the appendedclaims.

What is claimed is:
 1. A trench shielded Schottky barrier rectifierdevice, comprising: a first trench extending into a semiconductorregion; a first dielectric layer lining opposing sidewalls of the firsttrench; a first shield electrode disposed in the first trench; a secondtrench extending into the semiconductor region parallel to the firsttrench; a second dielectric layer lining opposing sidewalls of thesecond trench; a second shield electrode disposed in the second trench;a mesa region defined by the first trench and the second trench, themesa region having a width, a height, and a top surface; and a Schottkycontact disposed at the top surface of the mesa, the Schottky contacthaving an end spaced from a terminal end of the first trench by at leasta distance.
 2. The trench shielded Schottky barrier rectifier device ofclaim 1, wherein the distance is equal to a depth of the first trench.3. The trench shielded Schottky barrier rectifier device of claim 1,further comprising: a p-doped region disposed at an end of a Schottkybarrier metal and terminating before the terminal end of the firsttrench and before a terminal end of the second trench.
 4. The trenchshielded Schottky barrier rectifier device of claim 1, wherein the firsttrench is separated from the second trench by the mesa region.
 5. Thetrench shielded Schottky barrier rectifier device of claim 1, whereinthe terminal end of the first trench is a first terminal end, the firsttrench has a second terminal end, the first trench is aligned along aline between the first terminal end and the second terminal end.
 6. Thetrench shielded Schottky barrier rectifier device of claim 1, whereinthe terminal end of the first trench is a first terminal end, the firsttrench having a second terminal end, the second trench having a firstterminal end separated from the first terminal end of the first trenchby the mesa region and separated from the second end of the firstterminal end by the mesa region.
 7. The trench shielded Schottky barrierrectifier device of claim 1, further comprising: a p-doped region arounda perimeter of the Schottky contact.
 8. The trench shielded Schottkybarrier rectifier device of claim 1, further comprising: a p-dopedregion disposed in the mesa region.
 9. A trench shielded Schottkybarrier rectifier device, comprising: a first trench extending into asemiconductor region; a first dielectric layer lining opposing sidewallsof the first trench; a first shield electrode disposed in the firsttrench; a second trench extending into the semiconductor region parallelto the first trench; a second dielectric layer lining opposing sidewallsof the second trench; a second shield electrode disposed in the secondtrench; a mesa region defined by the first trench and the second trench,the mesa region having a width, a height, and a top surface; a Schottkycontact disposed at the top surface of the mesa, the Schottky contacthaving an end spaced from an end of the first trench by at least adistance; and a perimeter trench aligned perpendicular to the firsttrench and to the second trench, the first trench having an endseparated from the perimeter trench by a gap region.
 10. The trenchshielded Schottky barrier rectifier device of claim 9, wherein thedistance is equal to a depth of the first trench.
 11. The trenchshielded Schottky barrier rectifier device of claim 9, furthercomprising: a p-doped region disposed at an end of a Schottky barriermetal and terminating before the end of the first trench and before anend of the second trench.
 12. The trench shielded Schottky barrierrectifier device of claim 9, wherein the end of the first trench is afirst terminal end, the first trench has a second terminal end, thefirst trench is aligned along a line between the first terminal end andthe second terminal end.
 13. The trench shielded Schottky barrierrectifier device of claim 9, wherein the end of the first trench is afirst terminal end, the first trench having a second terminal end, thesecond trench having a first terminal end separated from the firstterminal end of the first trench by the mesa region and separated fromthe second end of the first terminal end by the mesa region.
 14. Thetrench shielded Schottky barrier rectifier device of claim 9, furthercomprising: a p-doped region around a perimeter of the Schottky contact.15. The trench shielded Schottky barrier rectifier device of claim 9,further comprising: a p-doped region disposed in the mesa region.
 16. Asemiconductor device, comprising: a first trench extending into asemiconductor region and including a first dielectric layer and a firstelectrode; a second trench extending into the semiconductor region andincluding a second dielectric layer and a second electrode, the secondtrench being aligned parallel to the first trench; a well region of afirst conductivity type disposed in the semiconductor region and betweenthe first trench and the second trench, the well region having an end;and a conductive trace disposed over the first trench and the secondtrench, the conductive trace having a length running perpendicular tothe first trench and the second trench and having a width that is lessthan the length, the conductive trace having a portion spaced from aportion of the semiconductor region disposed between the first trenchand the second trench by a first distance, the portion of the conductivetrace having a first side and a second side, the first side of theconductive trace being closer to the end of the well region than thesecond side of the conductive trace, the end of the well region beingspaced from the second side of the conductive trace by at least a seconddistance.
 17. The semiconductor device of claim 16, wherein the wellregion is electrically coupled to a conductive layer to receive apotential or is floating.
 18. The semiconductor device of claim 16,wherein the well region extends a depth into the semiconductor region,the second distance is equal to or greater than the depth of the wellregion.
 19. The semiconductor device of claim 16, wherein the wellregion extends a depth into the semiconductor region, the seconddistance is equal to or greater than a sum of the first distance and thedepth of the well region.
 20. The semiconductor device of claim 16,wherein the conductive trace is a shield runner, a gate runner, or aconductive riser.
 21. The semiconductor device of claim 16, wherein theconductive trace is disposed over at least a portion of the well region.22. The semiconductor device of claim 16, further comprising: a Schottkycontact disposed between the first trench and the second trench.